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| 1 . 9 0 . 9 5 0 . 9 5 2 . 9 0 . 4 1. 3 2. 4 1 . 0 jiangsu changjiang electronics industial co., ltd sot-23 plastic-encapsulate transistors s9016lt1 transistor (npn) features power dissipation p cm: 200 mw (tamb=25 ) collector current i cm: 0.025 a collector-base voltage v (br)cbo : 30 v operating and storage junction temperature range t j , t stg : -55 to +150 electrical characteristics (tamb=25 unless otherwise specified) parameter symbol test conditions min typ max unit collector-base breakdown voltage v (br)cbo ic= 100 a, i e =0 30 v collector-emitter breakdown voltage v (br)ceo ic= 0.1ma, i b =0 20 v emitter-base breakdown voltage v (br)ebo i e =100 a, i c =0 5 v collector cut-off current i cbo v cb =30v, i e =0 0.1 a emitter cut-off current i ebo v eb = 3v, i c =0 0.1 a dc current gain h fe(1) v ce =5v, i c = 1ma 70 200 collector-emitter saturation voltage v ce (sat) i c =10ma, i b = 1ma 0.3 v transition frequency f t v ce =5v, i c = 1ma f= 100mhz 300 mhz device marking s9016lt1= y6 unit: mm sot-23 1. base 2. emitter 3. collector
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